0.25 × 10 6b bit/in 2 NDRO Coupled Film Memory Elements

Abstract

The fabrication and operation of high-density (0.25 × 106bit/in2) nondestructive readout (NDRO) memory elements are described. The high density is made possible by coupled films and Permalloy keeper. The NDRO is made possible by multiple-pulse WRITE or hard-direction bias field. Typical performance parameters are IW-= 60mA, Ib= 30 rnA, and Vs = 150 µV/3 The small signal is detectable by multiple-pulse READ. When such memory elements are to be fabricated with peripheral circuits on the same Si chip, a self-contained chip will be obtained. Such chips could enjoy the same advantages as semiconductor memory chips such as few leads, modularity, amenability to bit organiza-tion, and possibility for error-correction, but would be capable of higher storage density due to simpler planar configuration. Copyright © 1970 by The Institute of Electrical and Electronics Engineers, Inc.