193 nm resists and lithography

Abstract

A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2. Copyright © 1994 John Wiley & Sons, Ltd.