A 2OdBm fully-integrated 60GHz SiGe power amplifier with automatic level control

Abstract

A +20dBm, 60 GHz power amplifier (PA) with fullyintegrated automatic level control is fabricated in a 0.13 μm SiGe BiCMOS process. At 60 GHz, the PA achieves a peak power gain of 18 dB with 13.1 dBm output power at a 1-dB compression and a peak power-added efficiency (PAE) of 12.7 %. The PA uses a single-stage push-pull amplifier topology with center-taped microstrip lines. This enables a highly efficient and compact layout of the amplifier core with a small area of 0.075 mm 2. An on-chip power detector circuit uses transmission lines with integrated coupling capacitors for output power detection. All bias voltages are generated on chip and are programmable through a three-wire serial digital interface. The PA quiescent current is 62 mA from a 4 V supply. © 2006 IEEE.