Abstract
In this paper we report results on a new hardened field oxide which exhibits improved resistance to ionizing radiation. This new field insulator shows much less radiation-induced shift in flatband voltage than that of ordinary SiO2 (either thermally grown or chemically vapor deposited). Results are obtained over a range of bias conditions (-10 volts to +22.5 volts) and radiation dosage (0 ~ 4 × 104 rads (SiO2))· © 1981 IEEE. All rights reserved.