Accurate phase capacitance spectroscopy of transition metal silicon diodes

Abstract

A complete understanding of Schottky barrier devices requires a knowledge of the electronic states at the metal-semiconductor interface. For this reason, a novel and accurate technique for measuring the capacitance of forward biased Schottky diodes has been developed. It is found that the measurement is extremely sensitive to the phase error and that the lock-in amplifier behaves in a nonlinear fashion at high signal current. These difficulties have been resolved to realize the interface state spectrum of a Pd/silicon Schottky barrier.