Aharonov-Bohm effect in thin, normal-metal films containing small voids

Abstract

The magnetoresistance of thin films containing small voids was found to saturate at high magnetic fields in contrast to the logarithmic behavior predicted by two-dimensional weak-localization- electron-interaction theory. A new model, which considers the Aharonov-Bohm interference of electrons traveling around the voids, is found to provide very reasonable fits to the data. © 1986 The American Physical Society.