Ambipolar organic field-effect transistor based on an organic heterostructure

Abstract

Exhibition of ambipolar conduction over a wide range of bias conditions by organic field effect transistors (OFET) based on an organic heterostructure of pentacene and N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) was investigated. An OFET structure in which electrons and holes are injected into the PTCDI-C13H 27 and pentacene layers from Mg top and Zu bottom contact was investigated. The electron and hole mobilities of 3×10-3 and 1×10-4cm2/V s respectively, are shown by the device. The device design serves as a model structure for ambipolar field-effect transistors.