An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

Abstract

An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.