An X-ray study of domain structure and stress in Pd₂Si films at Pd-Si interfaces

Abstract

The domain structures of palladium and Pd2Si as well as their crystallographic relationship to the silicon substrates were determined on Si(111) and Si(100) samples by mapping X-ray diffraction pole figures. X-ray diffraction topography and rocking curve measurements were carried out for the silicon substrates in order to detect the presence of elastic and/or plastic deformation in the substrates caused by silicide formation. The stresses in the silicide films were determined from the bending of the silicon substrates using X-ray diffraction techniques. © 1982.