Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling

Abstract

Detailed analysis of a buried layer of GaAs in 〈100〉 Si was carried out using electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling. The layer was formed by 200 keV dual ion implantation of Ga plus As ions, followed by furnace annealing at 600 and 950°C. It consists of GaAs particles which are surrounded by fully recrystallized silicon. Beneath it is a dislocation network, made up of a mixture of edge and screw dislocations.