Anisotropic etching of a novalak-based polymer at cryogenic temperature

Abstract

A radio-frequency induction plasma etcher with cryogenic capabilities has been used to achieve anisotropic etching of a novlak photosensitive polymer with pure oxygen. At - 100°C wafer chuck temperature, etching profiles and etching residues were observed at various power and pressure conditions. These etching results are discussed with the aid of response surface maps of dc bias voltage vs. inductive power, bias power, and pressure. It is demonstrated that submicron features with aspect ratios as high as 15:1 can be achieved using the optimized conditions.