Anomalies in the solubility for Zn in Al_xGa_1-xAs

Abstract

A comparative study has been made of the solubilities of Zn in Al xGa1-xAs (0.20≤x≤0.37) and GaAs at 700°C. The use of three diffusion sources (92% Ga-6% Zn-2% As, pure Zn, and ZnAs 2) provided a range of a factor of 40 in the measured solubility in GaAs. It was found that the solubility in AlxGa1-xAs increased with x for x>0.20 and that at low As4 pressures the solubility in Al0.20Ga0.80As exceeded that in GaAs whereas the reverse was true at high pressures. These findings may indicate the existence of unusually high defect concentrations in AlxGa 1-xAs. © 1971 The American Institute of Physics.