Anomalous electrical properties of solution-grown, p-type GaP

Abstract

The hole concentration determined from Hall effect measurements on Zn-doped, solution-grown GaP was found to exceed the Zn concentration. It has not been established whether the effect is due to additional acceptor defects introduced simultaneously with the Zn, or to an anomalously small Hall mobility/drift mobility ratio. © 1969 The American Institute of Physics.