Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs

Abstract

Boron is found to segregate readily from the channel region into the arsenic implanted source / drain regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V<inf>T</inf>rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFET's. This boron redistribution originates from the As implantation damage in the source and drain regions. © 1993 IEEE