Atomic geometry and dynamics of the GaSb(110) surface

Abstract

The structure of the relaxed GaSb(110) surface has been determined by mass-resolved Rutherford backscattering of He+ ions. From measurements of ion blocking angles it is concluded that the relaxation involves a rotation of the Ga-Sb surface bond by an angle of =29°-4°+7°out of the surface plane. The bond lengths at the surface are shown to remain unchanged. The root-mean-square thermal vibration amplitude of the surface atoms is found to be enhanced with respect to the bulk amplitude by a factor of 1.50.2. © 1984 The American Physical Society.