Backend implications for thermal effects in 3d integrated soi structures

Abstract

This paper studies the thermal impact of the backend technology in a 3D integrated SOI structure by numerically modeling and simulating structures with different configuration. Issues such as Joule heating in the interconnect, the effect of low-k dielectric materials and layout effects on maximum temperature rise in the structure have been addressed. The effect of Joule heating on maximum temperature in the structure was found to be important and increases the maximum temperature by 4 to 16% depending on the structure configuration. A 25% lower thermal conductivity of the dielectric material in a two-device structure increases the maximum temperature in the range of 19%. Structural and layout variations were investigated to determine minimum temperature rises and found to have significant influence on the device temperatures. © 2004 Materials Research Society.