Band-gap narrowing from luminescence in p-type Si

Abstract

The luminescence data of Schmid, Thewalt, and Dumke on heavily doped p-type Si has been analyzed to provide the effective band gap for the n·p product at room temperature in p+Si. The results are in very good agreement with the measurements of Slotboom and DeGraaff, and extend the acceptor concentrations for which the effective band gap is available by a factor of four. The disagreement of these results with the values obtained from infrared absorption measurements is further evidence of a nonrigid band-gap shift.