BaTiO3-Based Ferroelectric Transistors for Memristive Applications

Abstract

Memristors are a vital element in many proposed neuromorphic computing architectures, and different learning algorithms have different hardware requirements regarding the on/off ratio and memory time constants of individual memristive elements.1 In this work, low-strain barium titanate (BTO) films are used in memristive ferroelectric field effect transistors (FeFETs), with the goal of precisely controlling these factors. Under low-strain conditions, BTO thin films, with broken interfacial symmetry and alternating a/c domains, have been shown to display strong, anisotropic ferroelectric response as well as a large dielectric constant of over 4000.2 By growing these films using Ti- or Y- doped SrSnO3 on SrTiO3, the strain in these films can be controlled. In FeFETS, the orientation and strain in the BTO layer produces a variety of responses in the conduction channel, allowing for tuning of memristive behavior.