Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy

Abstract

Boron diffusivity in single-crystal diamond has been investigated. To this aim, a novel method using impedance spectroscopy for the study of the atomic diffusivity in wide-gap semiconductor has been developed, along with a model for the analysis of the dielectric response function. The advantages of this procedure are discussed. Boron diffusivity in diamond has been determined to be 6.9×10-20 cm2 s-1 at 800°C. A discussion of the results and a comparison with previous estimates are presented.