Central cell effects on acceptor spectra in Si and Ge

Abstract

The excited state spectra of the Group III acceptors in Si and Ge are calculated using a semi-empirical short range potential which is adjusted in each case to give the observed ground state binding energy. The model is in good agreement with the previously published data on the chemical shifts of the even-parity s-like excited states, as well as with our new measurements of the energies of these states for the deep acceptor In in Si. For odd-parity states, the model shows that the chemical shifts are negligibly small, in agreement with experiment. © 1980.