Characterization and simulation of acid catalyzed DUV positive photoresist

Abstract

An investigation of the dissolution behavior of an acid catalyzed deep ultraviolet (DUV) positive resist has been completed. The immersion develop dissolution rate as a function of dose and post exposure bake temperature was measured by Perkin Elmer Dissolution Rate Monitor (DRM) for single layer resist on a silicon substrate. A reaction-diffusion model has been built to describe the dependence of development rate on exposure dose and post exposure bake (PEB) time/temperature. A mixed diffusion model has been built to account for catalyst diffusion and quenching. Developed images have been compared with simulated image quality, line width, and process window.