CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.

Abstract

Sub- mu m in situ doped silicon epitaxial films have been successfully grown at temperatures as low as 550 degree C by a novel ultra high voltage/chemical vapor decomposition (UHV/CVD) process. Extensive electrical characterization of test devices fabricated in these films using low temperature ( less than equivalent to 880 degree C) processing indicated that the epilayers were of high quality. The n** plus -p junctions exhibit ideal characteristics with ideality of 1. 0, and reverse-bias leakage current density of less than 2. 5 fA mu m-**2 at 5 V. Carrier lifetime measurement from MOS capacitors was as high as 160 mu s. The current-voltage and oxide breakdown data further confirmed the suitability of these layers for VLSI devices.