Comparative study of FinFET versus quasi-planar HTI MOSFET for ultimate scalability

Abstract

The FinFET is compared against the quasi-planar trigate bulk MOSFET with high-permittivity (high-k) dielectric trench isolation (HTI MOSFET) for low-standby-power applications, at dimensions near the end-of-roadmap (11-nm half-pitch). It is found that the optimal transistor structure depends on the fin aspect ratio (AR) and the HTI dielectric constant εHTI: for sufficiently high εHTI, the HTI MOSFET can provide comparable or lower delay as the FinFET, for AR up to ∼2.5. Thus, the development of high-k dielectric and/or high-AR fin formation technologies will ultimately determine which transistor design is more advantageous. © 2006 IEEE.