Compositional and Electrical Properties of Si Metal-Oxide-Semiconductor Structure Prepared by Direct Photoenhanced Chemical Vapor Deposition using a Deuterium Lamp

Abstract

The 2,2,6,6-tetramethyl-3,5-heptanedionato and pivaloato precursors of copper have been investigated for their thermodynamic and gas-phase properties. More specifically, time-modulated mass spectroscopy has been used to determine the chemical compositions of the effusive beams of metalorganic precursors under various conditions, and to identify the thermal decomposition products resulting from breakdown of the effusive beam on a heated MgO(00l) single-crystal surface. From these results, their relative suitability for use in chemical beam epitaxy is compared. Also, copper oxide films have been grown in a chemical beam epitaxy system and their properties are discussed. © 1995, American Vacuum Society. All rights reserved.