Conditions for an Oxide-Free Si Surface for Low-Temperature Processing: Steady-State Boundary

Abstract

The oxidation and removal of surface oxides on silicon at low temperatures in an atmospheric-pressure chemical vapor deposition system has been studied. Oxygen concentrations from 5 ppb to 6 ppm and temperatures from 650 to 850°C were investigated. The oxygen pressure limits to maintaining an oxide-free surface are higher than for vacuum processing due to mass transport of oxygen in the carrier gas. © 1991, The Electrochemical Society, Inc. All rights reserved.