Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110)

Abstract

The surface core-level binding energy shifts have been obtained for the In 4d and the P2p core-levels on the InP(110) surface. In agreement with previous studies of core-level shifts on the cleavage face of III-V semiconductors, the anion and cation shifts are of almost equal magnitude and are of opposite polarity (-0.31 and +0.30 eV respectively). The results are compared with a similar investigation of the GaAs(110) surface and discussed in terms of a recent calculation of surface core-level shifts for the (110) cleavage face of III-V semiconductors. © 1989.