Contrast enhanced UV lithography with polysilanes

Abstract

Contrast enhanced lithography has been been applied to mid-uv projection lithography with a new class of CEL materials, polysilanes. The nonlinear bleaching photochemistry of polysilanes provides a unique "bleaching latency" for contrast enhanced lithography. SAMPLE resist exposure and development simulation is compared with experimental CEL resist images using AZ2400® photoresist. The contrast enhancement gained with the use of polysilanes is examined as a function of exposure dose, image size, and contrast enhancement film thickness.