Current scaling in aligned carbon nanotube array transistors with local bottom gating

Abstract

A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect transistors (FETs) (CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated and exhibit the best performance to date, with current density >40μA/μm (with no metallic nanotubes), inverse subthreshold slope of 70 mV/decade, and on/off-current ratio >105. Additionally, on-current from LBG-CNTFETs is shown to scale linearly with the number of nanotube channels. These advancements in device geometry and performance provide a new platform for further progress to be made toward high-performance FETs from aligned nanotubes. © 2010 IEEE.