Digital simulation of Czochralski bulk flow in a parameter range appropriate for liquid semiconductors

Abstract

Six numerical simulations of time-dependent flow in a crystal-growth crucible are described. The geometrical and physical parameters are in realistic ranges for growth from liquid semiconductors. Except when crucible rotation is absent, a well-defined Taylor column forms under the crystal face. Outside of the Taylor column, the meridional flow oscillates indefinitely between two qualitatively different configurations. The Taylor column itself is vertically stratified into four distinct regions. © 1977.