PublicationMicroelectronic EngineeringPaperDissociation kinetics of hydrogen-passivated (100) Si SiO2 interface defectsMicroelectronic EngineeringView publicationAbstractNo abstract available.Home↳ PublicationsDate01 Jan 1995PublicationMicroelectronic EngineeringAuthorsJ.H. StathisIBM-affiliated at time of publicationTopicsPhysical SciencesShare