Dopant measurements in semiconductors with atom probe tomography

Abstract

The capability of atom probe tomography to make useful measurements of dopant distribution single device geometry is explored by characterizing the compositional accuracy of reconstructed data sets. The objective of this analysis is to evaluate whether atom probe can provide measurements to guide a predictive model development for diffusion in device geometry and strain conditions. Simple measurements of thin films of varying compositions show that, except for boron, all elements studied were collected and identified correctly and match secondary ion mass spectrometry reference values. Boron in silicon shows more variability and may require in situ concentration references. © 2010 American Vacuum Society.