Effect of distributed charge in the nitride of an MNOS structure on the flat-band voltage

Abstract

Closed-form expressions have been obtained for the flat-band voltage of an MNOS structure with charge carriers trapped in the nitride bulk according to the Arnett-Yun model. Within the applicable limit of this model, the following observations can be made from these flat-band voltage expressions: When σQ (t) ≃4 or larger, the carrier distribution can be fairly accurately approximated by a step function, so far as flat-band voltage is concerned. When σQ (t) ≃0.1 or smaller, the centroid of the trapped carrier distribution approaches the trapping distance x0. σ is the capture cross section and Q (t) the total number of injected carriers at time t.