Effects of precursor additives on the stability of plasma enhanced chemical vapor deposited a-GeC(O):H films

Abstract

Germanium- and carbon-based films were deposited by plasma-enhanced chemical vapor deposition from tetramethylgermane (TMGe) with additions of oxygen, hydrogen, or argon. The index of refraction, extinction coefficient, and optical gap and Fourier transform infrared spectra of the films were measured as well as their stability in regular ambiance. It was found that the films deposited from pure TMGe were stable in time only if deposited at a negative bias above -250 V direct current. Films deposited at a bias of -150 V direct current could be stabilized by significant additions of oxygen to the plasma and complete stabilization was achieved at O2/TMGe ratios larger than 3 in the gas feed when GeOx films containing small amounts of C and H were obtained. Additions of hydrogen or argon to TMGe had only slight effects in improving the stability off the films.