Electromigration in single-crystal aluminum films

Abstract

Electrical open circuits can be produced in current-carrying polycrystalline aluminum thin film conductors as a result of electromigration phenomena. In this study, attempts have been made to induce such open circuits in comparable single-crystal aluminum thin-film conductors. It has not been possible to do so even after subjecting the latter to relatively high current densities for more than 10 000h. This observation adds strong support to the previous inference that the formation of electromigration-induced open circuits in polycrystalline aluminum thin film conductors is caused predominantly by diffusion along grain boundaries. © 1970 The American Institute of Physics.