Electronic Mobility in Semiconductor Heterostructures

Abstract

Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-Ga<inf>1-x</inf>Al<inf>x</inf>As heterojunctions. Copyright © 1986 by The Institute of Electrical and Electronics Engineers, Inc.