Electronic structure of the InP(110) surface: an inverse photoemission study

Abstract

The unoccupied electronic structure of the InP(110) surface has been investigated with k-resolved inverse photoemission spectroscopy. Two surface states were detected, partly dispersing in the projected bandgap, with energy positions that agree rather well with optical spectroscopy data. The measured band dispersions, however, are in poor agreement with existing band calculations for InP(110), whereas some recent self-consistent, quasiparticle calculations for GaAs(110) and GaP(110) present surface state bands with shapes similar to that measured. © 1991.