Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Abstract

We report the first systematic measurement of the electroreflectance spectra of InuGa1-uPvAs1-v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ 0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds.