Energy relaxation in p- and n-GaAs quantum wells: Confinement effects

Abstract

We have measured the energy relaxation of carriers in p- and n-type GaAs quantum wells using time-resolved photoluminescence. At low excitation densities (low carrier temperatures) the energy loss rate for holes is greater than for electrons, but it is not observed to depend on well width for values greater than 60Å. At high excitation densities the rate is found to increase significantly for narrow wells (25Å). © 1988.