Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

Abstract

An experimental-simulation methodology to explore the spatially nonhomogeneous properties of the tunneling current in nanoscaled MOSFET is introduced. The magnetic field B is introduced into the Schrödinger-Poisson system, which allows simulating the effect of the B field on the gate oxide tunneling current and be compared with experimental data. We found out that sweeping the B field from negative to positive values is equivalent to scan or map the tunneling mechanism along the channel from source to drain. The proposed methodology is useful for studying nonhomogeneous space distributed conductive properties, and it was validated with a 28-nm n-type Si MOSFET.