Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects

Abstract

We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), so called high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJT has a 1.65X higher drive current (VDS= -1.6 V and VGVT = -2 V), and a 70X lower off-state leakage (VDS = -1.6 V).