Field-driven domain-wall jumps in thin-film heads

Abstract

Modeling voltage transients in thin-film heads produced by irreversible wall motion allows calculation of wall displacement versus time. Velocity modulation of large wall jumps traversing shallow interaction sites allows calculation of the distribution of these sites. In multiple wall jumps, sympathetic secondary jumps producing flux changes of the same polarity as the primary jump involve walls situated along the flux path. Antisympathetic secondary jumps producing flux changes opposite that of the primary jump involve walls situated parallel to the flux path. Finally, thermal agitation is shown to be able to release a wall below its critical field.