Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY

Abstract

Electron and hole current densities across the gate oxide layer of MOSFETs due to Fowler-Nordheim tunneling are calculated by employing the well-known two-dimensional device simulator FIELDAY. The parametric dependences of these currents on, for example, electric field across the oxide layer, effective masses of electrons and holes, and barrier heights are studied in some detail. Calculated gate currents due to tunneling, as functions of drain-source voltage and gate-source voltage, are compared with available experiments. The agreement between the theory and experiments appears encouraging. © 1995.