Ge-GaAs (110) interface: A self-consistent calculation of interface states and electronic structure

Abstract

Self-consistent calculations allowing electron redistribution in a wide region around a Ge-GaAs(110) interface reveal six types of interface states. The charge densities and local density of states at the interface indicate Ge-Ga bonding states in the gap (but below the valence-band maximum) and a variety of other states at lower energy. Some estimates based on these pseudopotential results give information on band-edge discontinuities and the character of bonds across a nonpolar interface. © 1977 The American Physical Society.