Graphene technology with inverted-T gate and RF passives on 200 mm platform

Abstract

Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsic voltage gain. In addition, passive devices were monolithically integrated with graphene transistors to form the first GHz-range graphene IC using large-scale CVD graphene. The demonstration of high performance graphene FETs and IC fabricated using a 200 mm platform is a major step in transitioning this promising material from a scientific curiosity into a real technology. © 2011 IEEE.