Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

Abstract

The growth kinetics during Ti PE-ALD were studied and a kinetic model was introduced. Cl extraction reaction determined overall growth kinetics. TiCl4 adsorption and Cl extraction reaction followed first order kinetics. The initial growth rates through the first several cycles were substrate dependent. For Pt, Al, Au, and Cu, the initial growth rates were higher due to the higher Cl extraction rates for Cl adsorbed to the substrate materials, while for Si and amorphous C, the growth rates were smaller due to etching of substrate materials by atomic H.