Growth of group III nitrides. A review of precursors and techniques

Abstract

The AlGaInN quaternary alloy system is uniquely suited for numerous device applications because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition. Growth of epitaxial device-quality group III (Al, Ga, In) nitride films has been hindered by a lack of suitably lattice matched substrates, the large equilibrium dissociation pressure of N2 from the nitrides at typical growth temperatures, and predeposition reactions in the commonly employed metal-organic chemical vapor (MOCVD) precursors. The most successful films have been grown at temperatures in excess of 900 °C by MOCVD. However, high growth temperatures may limit compatibility and incorporation of group III nitrides with existing fabrication technologies and devices. Attempts to lower deposition temperature include activated nitrogen sources and alternative precursors. This review will discuss improvement in film properties as a function of growth chemistry and will focus on MOCVD precursors used specifically for the growth of group III nitrides.