High-performance dual-gate carbon nanotube FETs with 40-nm gate length

Abstract

We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 μS and a delay time per unit length of τ/L = 19 ps/μm. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects. © 2005 IEEE.