Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures

We investigate a novel Ti Chemical Vapor Deposition (CVD Ti) technique for source/drain and trench contact silicidation. This work is a first demonstration of a highly selective, superconformal Ti process that exhibits a low p-type CVD Ti/SiGe contact resistivity (pc) down to 2.1×10-9 Ω.cm2 (a 40% reduction vs. PVD Ti), matching the lowest published values [1-5]. A competitive n-type CVD Ti/Si