High‐temperature ion implantation in diamond

Abstract

C+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion‐induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous” carbon by an order of magnitude less than that due to cold‐implantation and a subsequent annealing at 1000°C. Moreover, hot implantation above 600°C produces two new spin‐1 centers, A‐5 and A‐6, which are tentatively identified as a small multivacancy cluster. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA