Hot electron transport through metal-oxide-semiconductor structure studied by ballistic electron emission spectroscopy

Abstract

Electrons were injected into thin Pt layers of metal-oxide-semiconductor (MOS) structures using the tip of a scanning tunneling microscope (STM). Collector currents emanating from the n-type Si(100) substrates were measured as a function of the electron energy. SiO2 layers were thermally grown in a device processing line and ranged from 27 to 62 A in thickness. Current transport through the MOD structure was modeled in a single band description for zero oxide thickness and fitted to the collector currents which had been corrected for impact ionization effects in the Si. Additionally, transmission probabilities were calculated by integrating the Boltzmann equation using Monte Carlo techniques.